Plasma Etch Cluster Tool for 200 mm Silicon Wafers
Notice title: Plasma etch cluster tool
Plasma Etch Cluster Tool: Etching of metal and thin film layers from 200 mm silicon wafers; capacity for at least four process chambers and at least three load ports; advanced chamber cleaning and conditioning (waferless cleaning between process wafers, cleaning or passivation with cover wafers for materials forming less volatile by-products); wide process-power range and etch-rate tunability through atomic layer etching (ALE), low-voltage pulsed-bias etching and steady-state processing; dual-zone chuck heating and dual-zone coil or power control for optimisation of within-wafer etch uniformity; production-level process reliability, uniformity, and reproducibility; process flexibility for research and development; direct award according to Section 40, subsection 2, point 2 of the Finnish Procurement Act (1397/2016) for technical reasons, as only the LAM 2300 platform with Kiyo 45 and MW strip chambers meets all requirements.
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