Advanced oxide and metal etcher
Notice title: Advanced oxide and metal etcher
Supply of an advanced plasma etch cluster tool: for etching metal and thin film layers from 200 mm silicon wafers; the device must be production-worthy and offer capacity for at least four process chambers. Required features include advanced chamber cleaning and conditioning (waferless cleaning, passivation with cover wafers), a wide process-power range and etch-rate tunability (ALE, low-voltage pulsed-bias etching, steady-state processing), dual-zone chuck heating and dual-zone coil or power control for within-wafer etch uniformity, at least three load ports, and a cluster architecture supporting at least four process chambers.
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