Scanning Electron Microscope

Supply of a Scanning Electron Microscope (SEM): 1 piece, with an electron optical system for high lateral resolution down to the sub-nanometre range, comprehensive detector set (chamber detectors for secondary (SE) and backscattered (BSE) electrons, in-lens detectors for SE and BSE with selectable energy ranges and clear signal separation), preferred field-free objective lens, easy and independent switching of acceleration voltage and beam current between high-resolution and analytical operating conditions, and a technical solution for bypassing sample charging. The system must enable the investigation of wafers up to 8 inches (any position from the center to the edge accessible under preferred ECCI conditions without losing the Region of Interest (ROI)) and up to 12 inches (largest possible area accessible) using Electron Channeling Contrast Imaging (ECCI) technique and Cathodoluminescence (CL) analysis on the same ROI, with high pixel numbers and a large field of view (up to 400 × 400 µm) at low magnification for low dislocation densities (< 10⁴ cm⁻²), and sample navigation using internal and external images with micrometer accuracy. A comprehensive software solution for automated data acquisition is required, including control of SEM functions and free arrangement within selected ROIs across the wafer via a modern, intuitive graphical user interface with a "drag-and-drop" workflow builder (combining microscope functions with ROI lists, loops, if/else logic, modular grouping), automated imaging workflow for large field-of-view and high-resolution acquisition, and integrated scripting capabilities for customer-specific Python codes. Options include software for evaluation of ECP patterns (indexing of diffraction lines, identifying tilt angles based on measured ECP), additional cable and nitrogen feedthroughs for an EBIC stage and a nitrogen cooling stage, a plasma cleaner inside the main chamber, and software for layered sample analyses (thicknesses from nanometre to micrometre range, analysis based on specified layer thicknesses or individual layer compositions).

Tender documents

Additional details