Secondary ion mass spectrometer (SIMS)
Secondary ion mass spectrometer (SIMS): 1 pc. Highly sensitive instrument for depth-profiled chemical analysis of semiconductor materials and structures, offering high depth resolution and high mass resolving power. Enables precise dopant and impurity profiling, as well as accurate determination of layer thickness and homogeneity, for characterizing advanced III-V and diamond-based device structures and epitaxial layers, including 150 mm substrates, for Fraunhofer IAF.
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